#MITSUBISHI, #CM200DY_12NFH, #IGBT_Module, #IGBT, CM200DY-12NFH Module Transistor N Channel 200A 600V 650W Module; CM200DY-12NFH
CM200DY-12NFH Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:600V Gate-Emitter voltage VGES:±20V Collector current Ic:200A Collector current Icp:400A Collector power dissipation Pc:650W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Weight 310g Module Transistor N Channel 200A 600V 650W Module