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MITSUBISHI CM25MD1-24H

  • CM25MD1-24H

CM25MD1-24H Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel; CM25MD1-24H

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 64
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Content last revised on June 28, 2023

Manufacturer Part Number: CM25MD1-24HPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X21Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 104 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONVCEsat-Max: 3.4 V Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

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