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Mitsubishi CM300DU-24F New 300A/1200V/IGBT/2U; Module Transistor N Channel 300 A 1.2 kV 890 W 1.2 kV Module, CM300DU-24F pictures, CM300DU-24F price, CM300DU-24F supplier
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Product Overview
The CM300DU-24F is a trench gate design Dual IGBTMOD™ Module. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Low drive power
Low VCEsat
Discrete super fast recovery free wheel diode
Isolated baseplate for easy heatsink
Applications
Power Management; Motor Drive & Control
 
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Voltage Vces: 1.2kV
DC Collector Current: 300A
No. of Pins: 7
Operating Temperature Max: 150°C
Operating Temperature Min: -40°C
Power Dissipation Pd: 890W
SVHC: To Be Advised
Transistor Case Style: Module
Transistor Polarity: N Channel
 

300A/1200V/IGBT/2U; Module Transistor N Channel 300 A 1.2 kV 890 W 1.2 kV Module

Shunlongwei Inspected every CM300DU-24F before Ship, All CM300DU-24F with 6 months warranty.
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