Content last revised on November 19, 2025
CM400HC6-24NFM: Technical Review of a 1200V, 400A Full SiC Power Module
Unlocking Next-Generation Efficiency in High-Frequency Power Conversion
The Mitsubishi CM400HC6-24NFM is a half-bridge power module engineered to deliver a transformative leap in performance by leveraging a full Silicon Carbide (SiC) architecture. It integrates a 1200V, 400A SiC-MOSFET with a SiC Schottky Barrier Diode (SBD), establishing a new benchmark for efficiency in demanding, high-frequency applications. This full SiC design provides two primary engineering benefits: drastically reduced switching losses and the capability for higher operational frequencies. For engineers developing next-generation power systems, this module directly addresses the challenge of increasing power density while minimizing thermal management complexity. For high-frequency >50kW power converters demanding maximum efficiency and density, this 400A full SiC module is the definitive choice.
Application Scenarios & Value
System-Level Benefits in DC Fast Charging and Solar Inverter Design
The CM400HC6-24NFM is engineered for power conversion topologies where minimizing energy loss is a primary design driver. Its capabilities are particularly impactful in applications such as DC Fast Charger (DCFC) stations and grid-tied solar inverters. What is the primary benefit of its full SiC architecture? Dramatically reduced switching losses for superior efficiency.
Consider the challenge for an engineer designing a compact, high-power DCFC operating on an 800V bus architecture. Using conventional silicon IGBTs, high switching frequencies (above 20 kHz) lead to excessive thermal losses, necessitating large, heavy heatsinks and complex cooling systems. The CM400HC6-24NFM's exceptionally low switching energy (Eon/Eoff) fundamentally alters this equation. By enabling efficient operation at higher frequencies, it allows for the use of smaller, lighter magnetic components and significantly reduces the thermal load. This directly translates to a higher power density, a smaller system footprint, and lower total cost of ownership—critical advantages in public charging infrastructure. While the CM400HC6-24NFM excels in these high-frequency applications, systems requiring higher current handling with conventional switching speeds may consider IGBT options like the CM600DX-24T.
Key Parameter Overview
Dissecting the Specifications for High-Efficiency Operation
The performance of the CM400HC6-24NFM is defined by its Silicon Carbide technology. The parameters below highlight its suitability for high-performance power conversion, detailed further in the official datasheet.
| Parameter Category | Parameter | Value | Conditions |
|---|---|---|---|
| Absolute Maximum Ratings (Tj=25°C) | Collector-Emitter Voltage (VCES) | 1200 V | Gate-Emitter Short |
| Continuous Collector Current (IC) | 400 A | Tc=25°C | |
| Total Power Dissipation (Pc) | 1040 W | Tc=25°C | |
| Switching Characteristics (Tj=150°C) | Turn-on Switching Loss (Eon) | 11.0 mJ (typ.) | IC=400A, VCC=600V |
| Turn-off Switching Loss (Eoff) | 8.0 mJ (typ.) | ||
| Reverse Recovery Loss (Err) | 3.6 mJ (typ.) | ||
| Thermal Characteristics | Thermal Resistance (Rth(j-c)Q) | 0.12 K/W (max.) | SiC-MOSFET |
| Thermal Resistance (Rth(j-c)D) | 0.23 K/W (max.) | SiC-SBD |
Download the CM400HC6-24NFM datasheet for detailed specifications and performance curves.
The Total Power Dissipation (Pc) of 1040 W is a critical thermal limit. Think of power loss as friction in an engine. The lower the friction, the more power from the fuel goes to the wheels instead of being wasted as heat. Similarly, the CM400HC6-24NFM's inherently low switching and conduction losses mean that for a given amount of processed power, less energy is converted into waste heat. This efficiency is the core reason smaller heatsinks can be used, directly impacting system size and cost.
Frequently Asked Questions
Engineering Questions on Implementation and Performance
How does the use of a full SiC design (SiC-MOSFET and SiC-SBD) in the CM400HC6-24NFM benefit high-frequency applications compared to a standard IGBT?
A full SiC design provides significantly lower switching losses. Unlike a silicon IGBT, the SiC-MOSFET has faster turn-on and turn-off characteristics. Critically, the integrated SiC Schottky Barrier Diode (SBD) has near-zero reverse recovery charge (Qrr). This eliminates the large current spike that occurs when an IGBT turns on while a standard silicon diode is still recovering, a major source of loss and EMI at high frequencies. This combined effect allows for efficient operation well above the practical limits of IGBTs, enabling smaller system magnetics.
What is the key advantage of the low reverse recovery charge (Qrr) in the internal freewheeling diode?
The near-zero Qrr of the SiC-SBD dramatically reduces turn-on losses in the opposing switch (the SiC-MOSFET) within the half-bridge. This not only boosts efficiency but also reduces voltage overshoot and ringing, leading to lower electromagnetic interference (EMI) and improved system reliability. It simplifies the design of snubber circuits and allows for cleaner, more predictable switching performance, which is a key topic explored in the SiC vs. IGBT technology showdown.
Industry Insights & Strategic Advantage
Strategic Advantages in Next-Generation Power Electronics
The adoption of full SiC modules like the CM400HC6-24NFM is a strategic move for designers aiming to align with key industry trends. The global push for electrification and renewable energy mandates higher efficiency and greater power density. In the competitive landscape of EV charging, the ability to deliver more power from a smaller, more efficient charger is a significant market differentiator. Likewise, in utility-scale solar, every fraction of a percent in inverter efficiency, as detailed in resources from manufacturers like Mitsubishi Electric, translates into substantial gains in energy generation and financial return over the system's lifetime.
Adopting a full SiC module is akin to upgrading a city's transportation from conventional cars to a high-speed rail system. Both can move people, but the high-speed rail does it much faster and with far greater energy efficiency, enabling a complete redesign of the city's infrastructure. In the same way, this SiC module enables a fundamental redesign of power converters, unlocking levels of performance and compactness that were previously unattainable with silicon-based components.
To evaluate the CM400HC6-24NFM for your power conversion design, consult the official datasheet for comprehensive performance graphs and application notes. For inquiries regarding your specific system requirements, please contact our technical support team.
