Mitsubishi CM600YE2N-12F IGBT Module

CM600YE2N-12F HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25°C) Collector-emitter voltage VCES VGE = 0V 1700V Gate-emitter voltageVCES VCE = 0V ±20V Collector current IC 600A Collector current ICM 1200A Maximum collector dissipation TC = 25°C, IGBT part 6200W Junction temperature Tj –40 ~ +150°C Storage temperature Tstg –40 ~ +125°C Isolation voltage Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.4000V Typical value 1.5 kg HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 1700V/600A/6200W