CM800E2C-66H Mitsubishi 3300V 800A Dual IGBT Module

CM800E2C-66H IGBT Module from Mitsubishi: 3300V 800A for high-reliability power conversion. 90-day warranty, ideal for traction inverters. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 275
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on February 6, 2026

A Technical Overview of the CM800E2C-66H IGBT Module

Engineered for High-Voltage Power Conversion

Delivering Robust Performance in Demanding 3.3kV Applications

The Mitsubishi CM800E2C-66H is a high-power, single-element IGBT module designed to provide robust and efficient switching performance in high-voltage industrial systems. With core specifications of 3300V and 800A, this module is engineered for exceptional reliability and thermal stability. Key benefits include a high short-circuit withstand capability and an Al-SiC baseplate for superior thermal management. It directly addresses the engineering need for durable power stages in applications like medium-voltage drives and dynamic braking choppers. For systems requiring robust performance in high-voltage applications, this 3300V module is an optimal choice due to its proven design and high power handling capacity.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the CM800E2C-66H are tailored for high-power, high-voltage switching applications. The parameters below highlight its capacity for robust operation and effective thermal dissipation, which are critical for long-term system reliability.

Functional Group: Absolute Maximum Ratings (Tj=25°C)
Collector-Emitter Voltage (VCES) 3300V
Collector Current (IC) @ Tc=95°C 800A
Peak Collector Current (ICM) 1600A
Maximum Power Dissipation (Pc) 9.6 kW
Functional Group: Electrical and Thermal Characteristics
Collector-Emitter Saturation Voltage (VCE(sat)) @ Ic=800A 3.8V (Typ.)
Maximum Junction Temperature (Tj max) 150°C
Thermal Resistance, Junction to Case (Rth(j-c)) 0.013 K/W (IGBT)
Isolation Voltage (Viso) 6000Vrms

Download the CM800E2C-66H datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Voltage DC Systems

The CM800E2C-66H is engineered specifically for high-power applications where reliability under high voltage stress is paramount. What is the primary benefit of its high voltage rating? Enhanced safety margins and operational stability in systems connected to medium-voltage grids.

A primary application for this module is in dynamic braking choppers for large industrial motors and railway traction systems. In these scenarios, the IGBT must rapidly switch to dissipate immense amounts of regenerative energy as heat. The 3300V collector-emitter voltage rating provides the necessary headroom to handle voltage spikes that occur during braking, preventing catastrophic failure and ensuring the protection of the main drive inverter. The module's robust single-element design is optimized for this type of high-energy pulse duty. While this module is ideal for high-voltage chopper circuits, for three-phase inverter designs in a lower voltage class, the CM1200DB-34N offers a dual-IGBT configuration with higher current handling at 1700V.

Frequently Asked Questions (FAQ)

Engineering Insights for the CM800E2C-66H

What is the significance of the 3300V rating for medium-voltage applications?
The 3300V VCES rating is crucial as it allows the module to be used in power converters connected to industrial grids operating above 1000V. This high voltage capability provides a significant safety margin against transient overvoltages, a common challenge in Variable Frequency Drive (VFD) systems. It enables a more robust and reliable design, reducing the need for complex and costly overvoltage protection circuits.

How does the Al-SiC baseplate contribute to the module's reliability in high-power cycles?
The Aluminum Silicon Carbide (Al-SiC) baseplate has a coefficient of thermal expansion (CTE) that closely matches the ceramic substrate and silicon chips. This is like building a bridge with materials that all expand and contract at nearly the same rate with temperature changes. This matching minimizes mechanical stress during power cycling, preventing solder fatigue and delamination over thousands of cycles, which directly translates to a longer operational lifetime in demanding applications like wind turbine converters and DC choppers.

Technical Deep Dive

A Closer Look at the Trade-off between Conduction Loss and Robustness

A critical parameter for engineers is the Collector-Emitter Saturation Voltage, VCE(sat), which is 3.8V for the CM800E2C-66H at its nominal 800A current. In high-voltage IGBTs, there is an inherent design trade-off between lowering VCE(sat) and maintaining a high breakdown voltage and robust Safe Operating Area (SOA). A lower VCE(sat) reduces conduction losses (P_loss = VCE(sat) * Ic), directly improving system efficiency. However, achieving a very low VCE(sat) in a 3300V device can sometimes compromise its ruggedness.

Mitsubishi's design for the H-series represents a balanced approach. The 3.8V VCE(sat) is optimized to minimize heat generation during operation while ensuring the device remains resilient to voltage spikes and short-circuit events. Think of it like the suspension on a heavy-duty truck: it's stiff enough to carry a massive load (high voltage) without bottoming out (failing), even if it's not as soft as a luxury car's suspension (lowest possible VCE(sat)). This balance is essential for applications where long-term reliability is more critical than achieving the absolute lowest conduction loss. For a deeper understanding of this fundamental trade-off, Infineon provides excellent documentation on their TRENCHSTOP™ IGBT3 technology, which explores similar design principles.

Industry Insights & Strategic Advantage

Powering the Backbone of Industrial and Renewable Infrastructure

The development of high-voltage IGBTs like the CM800E2C-66H is a direct response to the increasing demand for efficiency and power density in grid-scale and heavy industrial systems. As industries move towards higher-voltage DC buses to reduce transmission losses, components capable of operating reliably at these levels become indispensable. This module is a key enabler for next-generation DC fast chargers, medium-voltage motor drives, and auxiliary converters in railway systems.

The module’s robust thermal design, featuring a low Rth(j-c) of 0.013 K/W, aligns with the industry trend of creating more compact power electronic systems. Effective thermal management allows for smaller heatsinks and reduced system footprint, a critical advantage in space-constrained applications. This focus on reliability and thermal performance ensures that systems built with this module can meet stringent operational requirements and contribute to a lower total cost of ownership through enhanced durability and reduced maintenance needs. The design principles echo the evolution seen in Mitsubishi's power device families, from the H-Series to the more recent X-Series, which continue to push the boundaries of power density and efficiency.

For engineering teams evaluating high-voltage switching components for industrial chopper or auxiliary converter designs, the CM800E2C-66H offers a proven and reliable solution. To discuss your specific application requirements or to request a quotation, please contact our technical sales team for further assistance.

More from MITSUBISHI

Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi
Mitsubishi