When it comes to designing high-efficiency, reliable power conversion systems, the choice of IGBT module is crucial. For industrial engineers and procurement managers, selecting between widely used modules like the 7MBR35VP120-50 by FUJI and the BSM50GB120DN2 by Infineon can have a significant impact on project success. This in-depth comparison explores their key parameters, unique advantages, and ideal applications to help you make the best decision for your system requirements.
Insulated Gate Bipolar Transistor (IGBT) modules serve as the backbone of modern inverter systems, enabling high-efficiency switching at medium to high voltages and currents. As industrial automation, renewable energy, and servo drive solutions become more demanding, end-users require IGBTs with improved thermal management, compact footprints, and robust reliability. Both the FUJI 7MBR35VP120-50 and Infineon BSM50GB120DN2 are representative products in the 1200V IGBT market segment, but they differ in several important aspects.
Feature | 7MBR35VP120-50 (FUJI) | BSM50GB120DN2 (Infineon) |
---|---|---|
Collector-Emitter Voltage (Vces) | 1200 V | 1200 V |
Continuous Collector Current (Ic) | 35 A (Tc=25°C) | 50 A (Tc=25°C) |
Saturation Voltage (Vce(sat)) | Low (FUJI optimized)1 | 2.5 V |
Peak Collector Current (Icp, 1ms) | 70 A | 78 A |
Power Dissipation (Pc/Pd) | 210 W | 400 W |
Operating Temperature (Tj) | -40°C to +150°C | -40°C to +150°C |
Package Type | PIM / Compact Board Mount | Half Bridge / Screw Mount |
RoHS Compliant | Yes | Yes |
Isolation Voltage | 2500 V (AC, 1 min) | – |
1: Exact value depends on circuit conditions.
Refer to this IGBT Module application guide for more details on selection criteria.
Both modules are suitable for 1200V-class industrial applications, but subtle technical distinctions make them preferable in different contexts:
Gain deeper insight into IGBT application strategies via our IGBT Modules Selection Guide.
Both modules are rated for up to 150°C junction temperature, providing robust thermal resilience in cyclic or continuous-duty applications. The 7MBR35VP120-50’s lower rated power dissipation and PCB mounting are optimal for applications with tight thermal budgets and modular design needs. The BSM50GB120DN2, on the other hand, supports screw mounting for improved thermal interface with heatsinks, accommodating higher current loads and minimizing junction-to-case thermal resistance for heavily tasked industrial systems.
According to recent industry reports, the IGBT module market continues to shift toward higher density, integrated, and application-specific modules. Energy-efficient inverters, advanced automation, and renewable energy solutions all rely on the unique strengths of both FUJI and Infineon’s offerings. Ensure you evaluate not only technical fit but also supply chain resilience and lifecycle support when making a component choice. For more current market dynamics and technical analysis, visit our power electronics blog.
In summary, the 7MBR35VP120-50 excels in compact inverter, UPS, and PCB-based drive applications, with its unique PIM format and lower VCE(sat) focusing on efficiency and board integration. The BSM50GB120DN2 stands out for higher current handling, robust half-bridge architecture, and superior power dissipation, targeting heavy-duty industrial or automation needs. Your choice should be based on balancing system requirements, thermal management, installation method, and overall reliability expectations.
For individual project consultations or a deeper dive into specific features of these or additional IGBT Modules, access our technical resources or speak to an expert today.