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Infineon FF1400R17IP4 IGBT Module

Infineon FF1400R17IP4: A robust 1700V/1400A PrimePACK™ IGBT module. Features TRENCHSTOP™ technology for reliable, high-efficiency megawatt power conversion in wind and industrial drives.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 83
· Date Code: 2024+
. Available Qty: 316
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FF1400R17IP4 Specification

Infineon FF1400R17IP4 | Engineered for Megawatt-Scale Power Conversion & Reliability

The Infineon FF1400R17IP4 is not a general-purpose component; it's a specialized high-power IGBT module designed for the most demanding power conversion systems. As a cornerstone of the renowned PrimePACK™ family, this dual-switch module provides the high-current and high-voltage capabilities essential for applications where performance and long-term reliability are non-negotiable. It is engineered to form the backbone of multi-megawatt inverters and converters.

  • Voltage Class: 1700V, providing a robust safety margin for 1000V-class DC bus systems.
  • Current Rating: 1400A nominal collector current, enabling extremely high power throughput.
  • Topology: Half-bridge (dual switch) configuration in the industry-standard PrimePACK™ 2 package.
  • Core Technology: Features Infineon's proven IGBT4 High Power TRENCHSTOP™/Fieldstop chip technology.

Key Parameters Overview

For engineers, the specifications tell the story. The following table highlights the critical performance metrics that define the FF1400R17IP4's capabilities. For a comprehensive analysis, you can download the official datasheet.

Parameter Value / Condition
Collector-Emitter Voltage (V_CES) 1700 V
Continuous Collector Current (I_C) 1400 A (at T_C = 80°C)
Collector-Emitter Saturation Voltage (V_CEsat) Typ. 2.15 V (at I_C = 1400A, T_vj = 125°C)
Total Switching Energy (E_ts) Typ. 350 mJ (at I_C = 1400A, V_CE = 900V, T_vj = 125°C)
Thermal Resistance, Junction-to-Case (R_thJC) Max. 0.016 K/W per IGBT
Maximum Junction Temperature (T_vj max) 150°C

Technical Deep Dive: The Engineering Behind the Performance

Two core elements contribute to the Infineon FF1400R17IP4's exceptional performance: the silicon and the package. The IGBT4 High Power chip is a mature and highly optimized technology that strikes a critical balance between conduction and switching losses. The TRENCHSTOP™ structure dramatically reduces the VCE(sat), which directly translates to lower heat generation during on-state operation—a crucial factor in high-current applications. This silicon is paired with the PrimePACK™ 2 housing, which is mechanically designed for low stray inductance. This minimizes voltage overshoots during high-speed switching events, expanding the usable SOA (Safe Operating Area) and simplifying busbar and gate drive design.

Application Scenarios & Value Proposition

The FF1400R17IP4 excels in environments where power density and operational uptime are paramount.

  • Wind Turbine Converters: The 1700V blocking voltage is ideal for the high DC-link voltages found in modern wind energy systems. Its superior thermal cycling capability ensures a long service life despite the fluctuating power generation inherent to renewables. This module is a key component in enabling efficient wind-to-grid power conversion.
  • Heavy-Duty Motor Drives: In applications like mining excavators, marine propulsion, and large industrial pumps, the 1400A rating provides the raw power needed for high-torque motor control. The module's inherent ruggedness and robust short-circuit withstand time offer protection against the harsh electrical conditions common in these fields.
  • Megawatt-Scale Power Supplies & Grid Infrastructure: For large-scale UPS systems or static synchronous compensators (STATCOMs), efficiency is key to reducing operational costs. The low V_CEsat of the FF1400R17IP4 directly contributes to lower overall power losses, resulting in a more efficient and cooler-running system.

Frequently Asked Questions (FAQ)

Our engineers often receive questions about deploying high-power modules like this. Here are some common inquiries:

  • Is it feasible to parallel FF1400R17IP4 modules for multi-megawatt systems?Yes, absolutely. The IGBT4 chips within this module exhibit a positive temperature coefficient for V_CEsat. This means that as a chip heats up, its on-state resistance slightly increases, naturally forcing current to share with cooler, parallel-connected modules. This self-balancing characteristic simplifies the design of high-current inverter legs.
  • What are the most critical gate drive considerations for this module?Due to its high current and fast switching potential, a robust gate drive is essential. The PrimePACK™ package includes an auxiliary Kelvin Emitter connection. Using this connection for the gate driver return path bypasses stray inductance in the main load path, ensuring a clean and precise gate-emitter voltage. For more insights on this topic, review these 5 practical tips for robust IGBT gate drive design.
  • For detailed application support or to discuss sourcing for your next high-power project, please contact our technical team.

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