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MITSUBISHI FM100E2Y-10 IGBT Module

#MITSUBISHI, #FM100E2Y_10, #IGBT_Module, #IGBT, FM100E2Y-10 Power Field-Effect Transistor, 100A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicond

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 63
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FM100E2Y-10 Specification

Sell FM100E2Y-10, #MITSUBISHI #FM100E2Y-10 Stock, FM100E2Y-10 Power Field-Effect Transistor, 100A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM100E2Y-10, #IGBT_Module, #IGBT, #FM100E2Y_10
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Manufacturer Part Number: FM100E2Y-10Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 100 ADrain-source On Resistance-Max: 0.07 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 100A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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