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MITSUBISHI FM100E2Y-10

  • FM100E2Y-10
  • FM100E2Y-10 Power Field-Effect Transistor, 100A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM100E2Y-10

    · Categories: IGBT
    · Manufacturer: MITSUBISHI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 63
    MOQ: 1 PC
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    Content last revised on September 4, 2023

    Manufacturer Part Number: FM100E2Y-10Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 100 ADrain-source On Resistance-Max: 0.07 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 100A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET