#MITSUBISHI, #CM50TU_24H, #IGBT_Module, #IGBT, CM50TU-24H Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,; CM50TU-24H
Manufacturer Part Number: CM50TU-24HPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Manufacturer: Mitsubishi ElectricRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,