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MITSUBISHI CM200DY-28H IGBT Module

#MITSUBISHI, #CM200DY_28H, #IGBT_Module, #IGBT, CM200DY-28H Insulated Gate Bipolar Transistor, 200A I(C), 1400V V(BR)CES, N-Channel,; CM200DY-28H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 69
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CM200DY-28H Specification

Sell CM200DY-28H, #MITSUBISHI #CM200DY-28H Stock, CM200DY-28H Insulated Gate Bipolar Transistor, 200A I(C), 1400V V(BR)CES, N-Channel,; CM200DY-28H, #IGBT_Module, #IGBT, #CM200DY_28H
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Manufacturer Part Number: CM200DY-28HPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Additional Feature: SUPER FAST RECOVERYCase Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1400 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 200A I(C), 1400V V(BR)CES, N-Channel,

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