#Mitsubishi, #CM200DU_12NFH, #IGBT_Module, #IGBT, CM200DU-12NFH Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Manufacturer Part Number: CM200DU-12NFH
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Mitsubishi ELECTRIC CORP
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X7
Pin Count: 7
Manufacturer: Mitsubishi Electric
Risk Rank: 1.38
Case Connection: ISOLATED
Collector Current-Max (IC): 200 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 830 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7