MG100J2YS50 is the best choice if you want to crank up the performance level of your high power switching applications. Manufactured by Toshiba, this Module Silicon N Channel IGBT weighs 0.45 lbs. with a collector current amount of 100A and a collector emitter of 600V.
It has special features that can evolve your low-quality high power switching application into a superior apparatus. One of these is the high input impedance. This means that once your high power switching device is integrated with MG100J2YS50, no doubt, it can guarantee you a consistent optimum performance.
Other unique features are the enhancement mode and low saturation voltage. Enhancement mode guarantees that whatever kind of operation, it can still function at its best. On the other hand, low saturation voltage indicates that this device only requires less voltage when being operated under saturation.
High-efficiency, cost-effectiveness, and durability are three benefits you can expect from MG100J2YS50.