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MITSUBISHI FM50DZ-10S

  • FM50DZ-10S

FM50DZ-10S Power Field-Effect Transistor, 50A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM50DZ-10S

· Categories: IGBT
· Manufacturer: MITSUBISHI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 229
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Content last revised on June 27, 2023

Manufacturer Part Number: FM50DZ-10SPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: ,Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SEPARATE, 2 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.12 ΩFET Technology: METAL-OXIDE SEMICONDUCTORNumber of Elements: 2Operating Mode: DEPLETION MODEPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedTransistor Element Material: SILICON Power Field-Effect Transistor, 50A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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