#MITSUBISHI, #FM50DZ_10S, #IGBT_Module, #IGBT, FM50DZ-10S Power Field-Effect Transistor, 50A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: FM50DZ-10SPart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: ,Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SEPARATE, 2 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.12 ΩFET Technology: METAL-OXIDE SEMICONDUCTORNumber of Elements: 2Operating Mode: DEPLETION MODEPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedTransistor Element Material: SILICON Power Field-Effect Transistor, 50A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET