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Infineon FP50R12W2T7_B11 IGBT Module

#Infineon, #FP50R12W2T7_B11, #IGBT_Module, #IGBT, Infineon Technologies IGBT Module VCES=1200V ICnom=50A ICRM=100A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 31
· Date Code: 2022+
. Available Qty: 509
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Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
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FP50R12W2T7_B11 Specification

Sell FP50R12W2T7_B11, #Infineon #FP50R12W2T7_B11 Stock, Infineon Technologies IGBT Module VCES=1200V ICnom=50A ICRM=100A, #IGBT_Module, #IGBT, #FP50R12W2T7_B11
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/fp50r12w2t7_b11.html

Potential Applications

. Auxiliary inverters

. Air conditioning

. Motor drivers

Electrical Features

. Low VCEsat

. Trenchstop TM IGBT

. Overload operation up to 175°C

Mechanical Features

. 2.5kV AC 1 min insulation

. A1203 substrate with low thermal resistance

. High power density

. Compact design

. Press FIT contact technology

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 50 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 100 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 910 W

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V

Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

Gewicht Weight 39g

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