FS75R12KT3G Infineon 1200V 75A Six-Pack IGBT Module

FS75R12KT3G IGBT Module In-stock / Infineon: 1200V 75A. Low switching losses & integrated NTC. 90-day warranty, motor drives. Global shipping. Request pricing now.

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$ 56 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 389
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Content last revised on April 2, 2026

FS75R12KT3G: Engineering High-Efficiency 1200V Motor Control Systems

The FS75R12KT3G represents a benchmark in six-pack configurations, delivering an optimal balance of low conduction losses and switching efficiency for robust industrial automation. What is the primary benefit of the FS75R12KT3G module? It delivers optimized switching efficiency and integrated temperature monitoring for compact inverter designs. How does the integrated NTC thermistor simplify system design? It eliminates the need for external temperature sensors, directly reducing PCB routing complexity. For 400VAC motor drives prioritizing thermal margin, this 1200V six-pack module is the optimal choice.

  • Voltage Rating: 1200V
  • Nominal Current: 75A
  • Low Conduction Loss: VCE(sat) 1.7V

Key benefits include minimized thermal dissipation and streamlined IGBT module integration across high-density topologies.

Application Scenarios & Value

Achieving System-Level Reliability in Three-Phase Industrial Automation

Engineers often face significant thermal bottlenecks when scaling up power density in enclosed Variable Frequency Drive (VFD) architectures. In continuous-operation environments, managing heat extraction from the switching elements dictates the lifecycle of the entire controller. The FS75R12KT3G addresses this directly through its highly optimized Trench and Fieldstop technology.

Consider the challenge of designing a 30kW servo drive for robotics. High PWM frequencies demand minimal switching losses to prevent thermal runaway. By deploying the FS75R12KT3G with its low 1.7V VCE(sat) and fast-recovery emitter-controlled diodes, designers can maintain higher switching frequencies while suppressing EMI generation. Think of the VCE(sat) characteristic as a toll booth on a fast-moving highway: a lower voltage drop means less energy is "taxed" as heat during steady-state conduction, allowing the system to run cooler and more efficiently under heavy load.

While this 75A unit serves mid-tier power requirements effectively, systems demanding higher current capacity can utilize the related FS100R12KE3. Conversely, for lighter industrial loads, the FS50R12KE3 provides a scaled-down 50A alternative within an identical mechanical footprint.

Technical Deep Dive

Unpacking TRENCHSTOP™ 3 Technology for Enhanced Switching Dynamics

At the core of the FS75R12KT3G is the third-generation Trench gate and Fieldstop architecture. This silicon design methodology fundamentally shifts the performance trade-off curve. The trench gate structure maximizes channel width, drastically reducing the on-state resistance compared to legacy planar alternatives.

Simultaneously, the fieldstop layer enables a significantly thinner silicon wafer. This thinner profile directly accelerates the clearance of minority carriers during turn-off events, curbing switching losses. The integrated NTC thermistor acts like a highly sensitive built-in thermostat placed directly at the heat source. Instead of relying on delayed external heatsink sensors, the DSP receives real-time thermal data directly from the module's substrate. This proximity allows for aggressive dynamic derating algorithms, shielding the hardware during sudden overload transients.

For further insights into these conduction dynamics, review our detailed engineering guide on mastering 1200V IGBT efficiency.

Key Parameter Overview

Functional Grouping of the 1200V Six-Pack Specifications

Functional Group Parameter Value
Maximum Ratings Collector-Emitter Voltage (VCES) 1200V
Continuous DC Collector Current (IC nom) 75A
Electrical Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) 1.7V (typ. at 75A)
Gate Threshold Voltage (VGE(th)) 5.8V (typ.)
Thermal Properties Thermal Resistance, Junction to Case (RthJC) 0.35 K/W (per IGBT)
Isolation Test Voltage (VISOL) 2.5 kV RMS

Download the FS75R12KT3G datasheet for detailed specifications and performance curves.

Frequently Asked Questions

Resolving Common Engineering Queries on the 75A Six-Pack

How does the integrated NTC thermistor impact overall thermal protection strategies?
The embedded NTC provides an isolated, highly accurate temperature reading directly from the ceramic substrate. This allows drive controllers to implement predictive thermal derating rather than reactive shutdown, maximizing continuous system uptime.

What considerations are necessary for the 1.7V VCE(sat) when calculating heatsink requirements?
The exceptionally low 1.7V VCE(sat) minimizes static conduction losses. However, engineers must still calculate the combined dynamic switching losses based on their specific PWM frequency to properly size the IGBT Module thermal management solution.

Contact our technical procurement team today to verify current stock availability and seamlessly integrate the FS75R12KT3G into your next industrial inverter design.

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