Infineon FZ1200R33HE3

  • FZ1200R33HE3

FZ1200R33HE3 Infineon IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$
· Date Code: Please Verify on Quote
. Available Qty: 410
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Content last revised on September 17, 2024

FZ1200R33HE3 Product details
Features
·  Plug-and-play solution
·  Allows parallel connection of IGBT modules
·  For 2-level, 3-level and multilevel topologies
·  Built-in isolated DC/DC power supply (master)
·  Fiber-optic links (master)
·  Built-in interface to 1SP0635D2S1(C) (slave)
·  Duty cycle 0~100%
·  Dynamic Advanced Active Clamping DA2C
·  Dynamic IGBT short-circuit protection
·  Monitoring of supply voltage
·  Monitoring of gate voltage
·  Extremely reliable; long service life
·  Shortens application development time
·  Suitable for FZ1200R33HE3
Applications
·  Traction
·  Railroad power supplies
·  Light rail vehicles
·  HVDC
·  Flexible AC transmission systems (FACTS)
·  Medium-voltage converters
·  Industrial drives
·  Wind-power converters
·  Medical applications
·  Research
·  And many others

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:16V

Gate-Emitter voltage VGES:±20V

Collector current Ic:400 mA

Collector current Icp:800 mA

Collector power dissipation Pc:1000W

Collector-Emitter voltage VCES:6000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

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