#IXYS, #IXA4IF1200TC, #IGBT_Module, #IGBT, IXA4IF1200TC Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3/2; IXA4IF1200TC
Manufacturer Part Number: IXA4IF1200TCRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.23Case Connection: COLLECTORCollector Current-Max (IC): 9 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2Number of Elements: 1Number of Terminals: 2Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELReference Standard: IEC-60747Surface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 110 ns Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3/2