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IXYS IXFN150N10 New IGBT Module

#IXYS, #IXFN150N10, #IGBT_Module, #IGBT, IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicond

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 169
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IXFN150N10 Specification

Sell IXFN150N10, #IXYS #IXFN150N10 New Stock, IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN150N10, #IGBT_Module, #IGBT, #IXFN150N10
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixfn150n10.html

Manufacturer Part Number: IXFN150N10Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.31Additional Feature: AVALANCHE RATEDCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 150 ADrain Current-Max (ID): 150 ADrain-source On Resistance-Max: 0.012 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 520 WPower Dissipation-Max (Abs): 520 WPulsed Drain Current-Max (IDM): 560 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

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