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IXYS IXFN48N60P New IGBT Module

IXFN48N60P
# IXYS , #IXFN48N60P, #IGBT_Module, #IGBT, IXFN48N60P Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
  • Category: IGBT Module
  • Manufacturer: IXYS
  • Package Type: IGBT module
  • Date Code: 11+
  • Available Qty: 94

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IXFN48N60P Description

Sell IXFN48N60P, # IXYS #IXFN48N60P New Stock, IXFN48N60P Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4; IXFN48N60P, #IGBT_Module, #IGBT, #IXFN48N60P
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixfn48n60p.html
Manufacturer Part Number: IXFN48N60P
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Package Description: FLANGE MOUNT, R-PUFM-X4
Pin Count: 4
ECCN Code: EAR99
Manufacturer: IXYS Corporation
Risk Rank: 2.26
Additional Feature: AVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Rating (Eas): 2000 mJ
Case Connection: ISOLATED
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 600 V
Drain Current-Max (ID): 40 A
Drain-source On Resistance-Max: 0.14 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 110 A
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Finish: Nickel (Ni)
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Power Field-Effect Transistor, 40A I(D), 600V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

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