#IXYS, #IXGH2N250, #IGBT_Module, #IGBT, IXGH2N250 Insulated Gate Bipolar Transistor, 5.5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXGH2N250
Manufacturer Part Number: IXGH2N250Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 5.5 ACollector-Emitter Voltage-Max: 2500 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 32 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 5.5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN