#IXYS, #IXGH42N30C3, #IGBT_Module, #IGBT, IXGH42N30C3 Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXGH42N30C3
Manufacturer Part Number: IXGH42N30C3Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.71Case Connection: COLLECTORCollector Current-Max (IC): 250 ACollector-Emitter Voltage-Max: 300 VConfiguration: SINGLEFall Time-Max (tf): 120 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 223 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 250A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN