#IXYS, #IXGK55N120A3H1, #IGBT_Module, #IGBT, IXGK55N120A3H1 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXGK55N
Manufacturer Part Number: IXGK55N120A3H1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-264AAPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.29Additional Feature: ULTRA FAST, LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 125 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-264AAJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 460 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN