IXYS IXGT32N60C

  • IXGT32N60C

IXGT32N60C Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3; IXGT32N60C

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 750
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Content last revised on May 18, 2023

Manufacturer Part Number: IXGT32N60CPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: D3PAK-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.84Additional Feature: FASTCase Connection: COLLECTORCollector Current-Max (IC): 60 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEFall Time-Max (tf): 160 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

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