IXYS IXGX55N120A3D1

  • IXGX55N120A3D1

IXGX55N120A3D1 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,; IXGX55N120A3D1

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1637
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Content last revised on April 30, 2023

Manufacturer Part Number: IXGX55N120A3D1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: ,Manufacturer: IXYS CorporationRisk Rank: 5.73Collector Current-Max (IC): 125 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 460 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,

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