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IXYS IXTA76P10T New IGBT Module

#IXYS, #IXTA76P10T, #IGBT_Module, #IGBT, IXTA76P10T Power Field-Effect Transistor, 76A I(D), 100V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semicondu

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 871
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IXTA76P10T Specification

Sell IXTA76P10T, #IXYS #IXTA76P10T New Stock, IXTA76P10T Power Field-Effect Transistor, 76A I(D), 100V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN; IXTA76P10T, #IGBT_Module, #IGBT, #IXTA76P10T
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixta76p10t.html

Manufacturer Part Number: IXTA76P10TPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: D2PAKPackage Description: TO-263, 3 PINPin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 1.69Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1000 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 76 ADrain Current-Max (ID): 76 ADrain-source On Resistance-Max: 0.024 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 298 WPulsed Drain Current-Max (IDM): 230 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 76A I(D), 100V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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