#IXYS, #IXTL2X220N075T, #IGBT_Module, #IGBT, IXTL2X220N075T Power Field-Effect Transistor, 120A I(D), 75V, 0.0055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semi
Manufacturer Part Number: IXTL2X220N075TPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: ISOPLUS, I5PAC-5Pin Count: 5ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.82Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1000 mJCase Connection: ISOLATEDConfiguration: COMPLEXDS Breakdown Voltage-Min: 75 VDrain Current-Max (ID): 120 ADrain-source On Resistance-Max: 0.0055 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSIP-T5Number of Elements: 2Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 600 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 120A I(D), 75V, 0.0055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAC-5