#IXYS, #IXYH20N120C3, #IGBT_Module, #IGBT, IXYH20N120C3 Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD,; IXYH20N120C3
Manufacturer Part Number: IXYH20N120C3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPECCN Code: EAR99HTS Code: 8541.90.00.00Manufacturer: IXYS CorporationRisk Rank: 2.2Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 278 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD,