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IXYS IXZ210N50L

  • IXZ210N50L

IXZ210N50L RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,; IXZ210N50L

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 854
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Content last revised on June 24, 2023

Manufacturer Part Number: IXZ210N50LPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: SMALL OUTLINE, R-PDSO-F6ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.73Case Connection: ISOLATEDConfiguration: SINGLEDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 10 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-F6Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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