Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

MG100H2YL1 Toshiba 1200V 100A Dual IGBT Module

  • MG100H2YL1
  • MG100H2YL1 IGBT Module In-stock / Toshiba: 1200V 100A dual device for efficient power switching. 90-day warranty, for motor drives & VFDs. Global fast shipping. Get quote.

    · Categories: IGBT
    · Manufacturer: Toshiba
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 169
    90-Day Warranty
    Global Shipping
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on July 9, 2026

    Toshiba MG100H2YL1: Engineering Analysis of a 1200V/100A Dual IGBT Module

    Introduction: A Workhorse for Medium-Power Inverters

    Streamlining Inverter Design with a Balanced Performance Profile

    The Toshiba MG100H2YL1 is a Silicon N-Channel IGBT module engineered to provide a robust and practical foundation for high-power switching applications. With its core specifications of 1200V | 100A | Half-Bridge Configuration, this module delivers a streamlined solution for power conversion systems. Key benefits include a simplified inverter leg design due to its dual-device integration and a performance profile that balances conduction and switching efficiency. For motor drives and power converters requiring a reliable, industry-standard 1200V half-bridge, the MG100H2YL1 provides a proven platform for performance and integration.

    Key Parameter Overview

    Decoding the Specs for Efficient Power Conversion

    The technical specifications of the MG100H2YL1 define its capabilities in power switching applications. The parameters are organized below to provide a clear view of the module's electrical and thermal performance characteristics. What is the primary benefit of its integrated design? Simplified system assembly and potentially lower stray inductance compared to discrete components.

    Absolute Maximum Ratings (Tc = 25°C)
    Collector-Emitter Voltage VCES 1200V
    Gate-Emitter Voltage VGES ±20V
    Collector Current (DC) IC 100A
    Collector Current (1ms Pulse) ICP 200A
    Collector Power Dissipation PC 580W
    Junction Temperature Tj 150°C
    Electrical and Thermal Characteristics (Tj = 25°C unless otherwise noted)
    Collector-Emitter Saturation Voltage (IC = 100A) VCE(sat) 2.7V max
    Gate-Emitter Cutoff Voltage VGE(off) 4.0 to 8.0V
    Input Capacitance Cies 7200 pF (typ.)
    Turn-On Time ton 1.00 µs (typ.)
    Turn-Off Time toff 1.50 µs (typ.)
    Thermal Resistance (Junction to Case) Rth(j-c) 0.215 °C/W (per IGBT)

    Download the MG100H2YL1 datasheet for detailed specifications and performance curves.

    Application Scenarios & Value

    Achieving Robust Performance in Three-Phase Motor Drives

    The MG100H2YL1 is an optimal component for building the power stage of a Variable Frequency Drive (VFD) or servo drive. In a typical three-phase inverter design for a 400V or 480V AC industrial motor, engineers face the challenge of creating a compact, reliable, and thermally manageable power conversion unit. The integrated half-bridge topology of this module directly addresses this by combining two IGBTs into a single package. This simplifies the layout for one leg of the inverter, reducing both component count and the parasitic inductance that can cause voltage overshoots in discrete designs.

    With a 1200V collector-emitter voltage rating, the module offers a substantial safety margin against the voltage spikes common on industrial power lines, enhancing system ruggedness. Its 100A DC current rating makes it well-suited for controlling AC induction motors in the 15 kW to 30 kW class, a common requirement in applications like conveyor systems, pumps, fans, and CNC machinery. What is the impact of its thermal design? An electrically isolated base allows multiple modules to be mounted on a single heatsink without complex insulating layers, simplifying assembly and improving thermal transfer. For systems requiring higher power handling, the related MG150Q2YS50 offers a similar voltage class with a higher current rating of 150A.

    Technical Deep Dive

    A Closer Look at the VCE(sat) vs. Switching Speed Trade-Off

    A critical aspect of IGBT selection is understanding the balance between on-state and switching losses, a trade-off defined by parameters like VCE(sat) and switching times. The MG100H2YL1 specifies a maximum VCE(sat) of 2.7V at its nominal 100A current. This voltage drop across the collector and emitter when the device is fully 'on' directly determines conduction losses (Pcond = VCE(sat) × IC × Duty Cycle). A lower VCE(sat) means less heat generated during the on-state, which is a dominant factor in low-frequency applications.

    This can be visualized by thinking of VCE(sat) as the 'friction' the current experiences when the switch is closed. In a low-speed application like a 2 kHz motor drive, the switch stays closed for relatively long periods, so this friction is the main source of heat. Conversely, switching losses (Eon and Eoff) represent the energy consumed each time the IGBT transitions between on and off. While the MG100H2YL1 has moderate switching speeds, its characteristics are well-suited for the switching frequencies typically found in industrial motor control (2-10 kHz), where this balance provides a practical compromise between efficiency and thermal load. For a deeper understanding of this topic, explore this guide to mastering 1200V IGBTs in industrial inverters.

    Frequently Asked Questions (FAQ)

    How does the MG100H2YL1's integrated half-bridge configuration benefit my inverter design?
    The half-bridge (2-in-1) configuration simplifies the power stage layout by integrating two necessary IGBTs for an inverter phase leg into a single module. This reduces the number of components on the board, minimizes assembly complexity, and can lower stray inductance between switches, leading to improved electrical performance and higher reliability.

    What is the significance of the 2.7V maximum VCE(sat) for this module?
    The VCE(sat) of 2.7V at 100A is a crucial parameter for thermal design. It allows engineers to accurately calculate the conduction losses, which is the primary source of heat generation in many motor drive applications. This enables precise heatsink selection and ensures the module operates within its safe junction temperature limits, contributing directly to long-term system reliability. A comprehensive guide on decoding IGBT datasheets can provide further context.

    For engineering inquiries or to assess this module for your power system design, please contact our technical support team for further information.

    More from Toshiba

    Toshiba
    Toshiba
    Toshiba
    Toshiba
    Toshiba
    Toshiba
    AI Version: v1.0.4