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TOSHIBA MG150Q2YS65H

  • MG150Q2YS65H
  • MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT 1200V 150A

    · Categories: IGBT
    · Manufacturer: TOSHIBA
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 420
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    Content last revised on August 28, 2026

    MG150Q2YS65H Product details
    High Power & High Speed Switching Applications

    ● High input impedance
    ● Enhancement-mode
    ● The electrodes are isolated from case.

    aximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:1200V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :150A
    Collector current Icp 1ms Tc=25°C :300A
    Collector power dissipation Pc:890W
    Isolation Voltage VIsol (AC 1 minute) :2500V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C
    Mounting screw torque 3 N·m

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