TOSHIBA MG150Q2YS65H

  • MG150Q2YS65H

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT 1200V 150A

· Categories: IGBT
· Manufacturer: TOSHIBA
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 420
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Content last revised on December 4, 2024

MG150Q2YS65H Product details
High Power & High Speed Switching Applications

● High input impedance
● Enhancement-mode
● The electrodes are isolated from case.

aximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :300A
Collector power dissipation Pc:890W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3 N·m

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