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Toshiba MG300Q2YS50 IGBT Module

#Toshiba, #MG300Q2YS50, #IGBT_Module, #IGBT, MG300Q2YS50 TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt; MG300Q2YS50

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$
· Date Code: 2021+
. Available Qty: 357
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MG300Q2YS50 Specification

Sell MG300Q2YS50, #Toshiba #MG300Q2YS50 Stock, MG300Q2YS50 TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt; MG300Q2YS50, #IGBT_Module, #IGBT, #MG300Q2YS50
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MG300Q2YS50 Description

MG300Q2YS50 GTR Module Silicon N Channel IGBT; TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt. High Power Switching Applications Motor Control Applications.

Target_Applications

MG300Q2YS50 could be used in High Power Switching / Motor Control Applications

Maximum Ratings(Ta-25°C)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:300A

Collector current Icp:600A

Collector power dissipation Pc:2000W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 *1 N·m

TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt

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