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TOSHIBA MG800J1US52

  • MG800J1US52

MG800J1US52 Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel, MODULE-7; MG800J1US52

· Categories: IGBT
· Manufacturer: TOSHIBA
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 72
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Content last revised on May 24, 2023

Manufacturer Part Number: MG800J1US52APart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN FETGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 770 nsTurn-on Time-Nom (ton): 550 nsVCEsat-Max: 2.7 V Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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