Sell MIG50J7CSB1W, #Toshiba #MIG50J7CSB1W Stock, MIG50J7CSB1W Toshiba Insulated Gate Bipolar Transistor 50A 600V , #IGBT_Module, #IGBT, #MIG50J7CSB1W
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Manufacturer Part Number: MIG50J7CSB1W
Part Life Cycle Code: Active
Ihs Manufacturer: Mitsubishi ELECTRIC CORP
Manufacturer: Mitsubishi Electric
Collector Current-Max (IC): 50 A
Collector-Emitter Voltage-Max: 600 V
Number of Elements: 1
Operating Temperature-Max: 100 °C
Subcategory: Insulated Gate BIP Transistors
VCEsat-Max: 2.2 V
Insulated Gate Bipolar Transistor 50A I(C) 600V V(BR)CES
- Electrical Specifications:
- Collector-Emitter Voltage (V<sub>CE</sub>): Rated at 600V.
- Collector Current (I<sub>C</sub>): 50A continuous.
- Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>): Ranges between 1.5V and 2.5V, depending on temperature (typically around 2V at 125°C).
- Switching Times:
- Turn-On Time (t<sub>on</sub>): Around 1.3 to 2.2 µs.
- Turn-Off Time (t<sub>off</sub>): Approximately 1.1 to 2.1 µs, depending on load and conditions.
- Control Stage:
- Input Voltage: The control input requires 15V for operation.
- Overcurrent Trip Level: Rated at 80A.
- Over-temperature Protection: Trip point between 110°C and 125°C.
- Thermal Resistance:
- Junction-to-Case Resistance: For the IGBT section, thermal resistance is typically 0.36°C/W.
- Case-to-Fin Thermal Resistance: Around 0.017°C/W when compound is applied.
- Recommended Operating Conditions:
- Supply Voltage (V<sub>CC</sub>): Recommended between 300V and 400V for optimal operation.
- Control Voltage: Rated 15V with a range from 13.5V to 16.5V.
- Carrier Frequency: Recommended up to 20 kHz for PWM control
