#IXYS, #MIXA100W1200TEH, #IGBT_Module, #IGBT, MIXA100W1200TEH Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES,; MIXA100W1200TEH
Manufacturer Part Number: MIXA100W1200TEHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.73Collector Current-Max (IC): 155 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 500 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 155A I(C), 1200V V(BR)CES,