#IXYS, #MKI75_06A7, #IGBT_Module, #IGBT, MKI75-06A7 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel,; MKI75-06A7
Manufacturer Part Number: MKI75-06A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X14Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X14Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 280 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel,