#IXYS, #MKI80_06T6K, #IGBT_Module, #IGBT, MKI80-06T6K Insulated Gate Bipolar Transistor, 89A I(C), 600V V(BR)CES, N-Channel, E1-PACK-24; MKI80-06T6K
Manufacturer Part Number: MKI80-06T6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X10Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 89 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X10Number of Elements: 4Number of Terminals: 10Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 210 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 89A I(C), 600V V(BR)CES, N-Channel, E1-PACK-24