IXYS MUBW10-06A6

  • MUBW10-06A6

MUBW10-06A6 Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW10-06A6

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 2040
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Content last revised on November 6, 2023

Manufacturer Part Number: MUBW10-06A6Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.64Additional Feature: FASTCase Connection: ISOLATEDCollector Current-Max (IC): 11 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25JESD-609 Code: e3Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 45 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, MODULE-25

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