Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IXYS MWI35-12A7T

  • MWI35-12A7T

MWI35-12A7T Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel,; MWI35-12A7T

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 147
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on July 6, 2023

Manufacturer Part Number: MWI35-12A7TPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Manufacturer: IXYS CorporationRisk Rank: 5.62Additional Feature: ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 62 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X19JESD-609 Code: e3Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel,

More from IXYS