IXYS MWI50-12E7 IGBT Module

Manufacturer Part Number: MWI50-12E7Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-17Pin Count: 17Manufacturer: IXYS CorporationRisk Rank: 5.63Additional Feature: UL REGONIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P11JESD-609 Code: e3Number of Elements: 6Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 350 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin (Sn) - with Nickel (Ni) barrierTerminal Form: PIN/PEGTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-17