#ON Semiconductor, #NSBA114YF3T5G, #IGBT_Module, #IGBT, NSBA114YF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 47 k, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; N
Manufacturer Part Number: NSBA114YF3T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F3Pin Count: 3Manufacturer Package Code: 524AAECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.57Additional Feature: BUILT IN BIAS RESISTANCE RATIO IS 4.7Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.297 WSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 47 k, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL