Content last revised on March 3, 2025
FEATURE
Inverter + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBTTM chip
b) The over-temperature protection which detects the chip sur-face temperature of CSTBTTM is adopted.
c)Error output signal is possible from all each protection up-per and lower arm of IPM.
d) Compatible L-series package.
•3φ100A, 600V Current-sense and temperature sense IGBT type inverter
• Monolithic gate drive & protection logic
•Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-FOavailable from upper arm devices)
• UL Recognized
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Collector-Emitter Voltage 600V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc= 25°C 100A
±ICP Collector Current (Peak) TC= 25°C 200A
PC Collector Dissipation TC= 25°C 390W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 2.5~3.5 N·m
Weight 380g
