PHM8001 Power Field-Effect Transistor, 640A I(D), 150V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; PHM8001
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.