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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J3T-IX

VI-J3T-IX

VI-J3T-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J3T-IX
RN141GT2R

RN141GT2R

RN141GT2R Pin Diode, 50V V(BR),; RN141GT2R
VI-253-EX

VI-253-EX

VI-253-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-253-EX
SBC846BDW1T1G

SBC846BDW1T1G

SBC846BDW1T1G Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; SBC846BDW1T1G
KS524502HB

KS524502HB

KS524502HB Power Bipolar Transistor, 20A I(C), 1-Element,; KS524502HB
2SC3332S-AA

2SC3332S-AA

2SC3332S-AA Bipolar Transistor, 160V, 0.7A, Low VCE(sat) NPN Single NP, TO-92 / NP, 1500-REEL; 2SC3332S-AA
DIM2400ESS17-A

DIM2400ESS17-A

DIM2400ESS17-A Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, E, 9 PIN; DIM2400ESS17-A
S2010FS21

S2010FS21

S2010FS21 Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, TO-202, 3 PIN; S2010FS21
APTGT100DA170D1G

APTGT100DA170D1G

APTGT100DA170D1G Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; APTGT100DA170D1G
A50P900-4

A50P900-4

A50P900-4 Electric Fuse, Very Fast Blow, 900A, 500VAC, 450VDC, 100000A (IR), Inline/holder,; A50P900-4