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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MP6001

MP6001

MP6001 TRANSISTOR 10 A, 200 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; MP6001
VUO16-12NO1

VUO16-12NO1

VUO16-12NO1 Bridge Rectifier Diode, 3 Phase, 15A, 1200V V(RRM), Silicon,; VUO16-12NO1
RFB300-24S28-5

RFB300-24S28-5

RFB300-24S28-5 DC-DC Regulated Power Supply Module, 1 Output, 308W, Hybrid; RFB300-24S28-5
ZUS1R52415

ZUS1R52415

ZUS1R52415 DC-DC Regulated Power Supply Module; ZUS1R52415
MA46H120

MA46H120

MA46H120 Variable Capacitance Diode, 1.1pF C(T),; MA46H120
QRS0640T30

QRS0640T30

QRS0640T30 Rectifier Diode, 1 Phase, 1 Element, 195A, 600V V(RRM), Silicon, MODULE-2; QRS0640T30
FST100100

FST100100

FST100100 100V 100A Silicon Schottky Rectifier in TO-249AB Package; FST100100
C380PB

C380PB

C380PB Silicon Controlled Rectifier, 400A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,; C380PB
2N3906RLRAG

2N3906RLRAG

2N3906RLRAG Small Signal PNP Bipolar Transistor, TO-92 40 V, 0.2 A, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N3906RLRAG
TTB6C110N12KOF

TTB6C110N12KOF

TTB6C110N12KOF Silicon Controlled Rectifier, 90A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, ISOPACK-12; TTB6C110N12KOF