MITB15WB1200TMH Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; MITB15WB1200TMH
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.