TT251N18 Silicon Controlled Rectifier, 410A I(T)RMS, 261000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE-7; TT251N18
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.