Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRFU6215PBF

IRFU6215PBF

IRFU6215PBF Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3; IRFU6215PBF
ND600N18

ND600N18

ND600N18 Rectifier Diode, 1 Phase, 1 Element, 600A, 1800V V(RRM), Silicon, MODULE-3; ND600N18
CM800HA-50H

CM800HA-50H

CM800HA-50H Mitsubishi Hvight modules high power switching use insulated type 2500V 800A
Q4015L558

Q4015L558

Q4015L558 TRIAC, 400V V(DRM), 15A I(T)RMS, TO-220AB, TO-220, 3 PIN; Q4015L558
PAT20016

PAT20016

PAT20016 Silicon Controlled Rectifier, 314A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-8; PAT20016
VI-2NP-EU

VI-2NP-EU

VI-2NP-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-2NP-EU
T500144004AQ

T500144004AQ

T500144004AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T500144004AQ
IXXH40N65B4

IXXH40N65B4

IXXH40N65B4 Insulated Gate Bipolar Transistor,; IXXH40N65B4
T607121534BT

T607121534BT

T607121534BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607121534BT
2N6497G

2N6497G

2N6497G Power 5A 250V Discrete NPN, TO-220 3 LEAD STANDARD, 50-TUBE; 2N6497G