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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N5461

2N5461

2N5461 Small Signal JFET P-Channel, 1000-BLKBX; 2N5461
T7070433B4BY

T7070433B4BY

T7070433B4BY Silicon Controlled Rectifier, 500A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE T70, 3 PIN; T7070433B4BY
MBM150GS12EBW

MBM150GS12EBW

MBM150GS12EBW Insulated Gate Bipolar Transistor; MBM150GS12EBW
VI-214-EY

VI-214-EY

VI-214-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-214-EY
VI-B34-CV

VI-B34-CV

VI-B34-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B34-CV
MBR60045CTR

MBR60045CTR

MBR60045CTR 45V 600A Silicon Schottky Rectifier in Twin Tower Package; MBR60045CTR
VI-25H-IU

VI-25H-IU

VI-25H-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-25H-IU
VI-25V-CW

VI-25V-CW

VI-25V-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-25V-CW
T507107044AQ

T507107044AQ

T507107044AQ Silicon Controlled Rectifier, 110A I(T)RMS, 110000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507107044AQ
2SD1858TV2Q

2SD1858TV2Q

2SD1858TV2Q Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN; 2SD1858TV2Q