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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N5657

2N5657

2N5657 0.5 A, 350 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX; 2N5657
2SC3838KT146P

2SC3838KT146P

2SC3838KT146P RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN, SC-59, SMT3, 3 PIN; 2SC3838KT146P
2N5064RLRMG

2N5064RLRMG

2N5064RLRMG Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; 2N5064RLRMG
MSKD200-12

MSKD200-12

MSKD200-12 Rectifier Diode, 1 Phase, 2 Element, 200A, 1200V V(RRM), Silicon, CASE D2, 3 PIN; MSKD200-12
IXGH24N60C4D1

IXGH24N60C4D1

IXGH24N60C4D1 Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH24N60C4D1
VS-242NQ030PBF

VS-242NQ030PBF

VS-242NQ030PBF Rectifier Diode, Schottky, 1 Phase, 1 Element, 30V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1; VS-242NQ030PBF
PS431615

PS431615

PS431615 Silicon Controlled Rectifier, 3300A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, POW-R-BLOK-4; PS431615
2MBI150NB-120

2MBI150NB-120

2MBI150NB-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; 2MBI150NB-120
IRFS3004-7PPBF

IRFS3004-7PPBF

IRFS3004-7PPBF Power Field-Effect Transistor, 400A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-7; IRFS3004-7PPBF
2N7052

2N7052

2N7052 Small Signal Bipolar Transistor; 2N7052